Ultra-High-Speed Low-Power Electronics

dc.contributor.author	Obukhov, I. A.
dc.date.accessioned	2025-03-20T11:56:18Z
dc.date.available	2025-03-20T11:56:18Z
dc.date.issued	2025
dc.identifier.citation	Ultra-High-Speed Low-Power Electronics	ru, en_US, uk
dc.identifier.uri	http://lib.sevsu.ru/xmlui/handle/123456789/11737
dc.description.abstract	The current state and prospects of development of the component base for ultra-high-speed electronics with low power consumption are considered. Approaches to the design of solid-state electronic devices based on nanowires that can be used in future digital electronics and their constructions are proposed. Estimates of the expected characteristics of these devices are presented. Ссылка на статью на русском языке: https://lib.sevsu.ru/xmlui/handle/123456789/11739	ru, en_US, uk
dc.publisher	Издательство Севастопольского государственного университета	ru, en_US, uk
dc.subject	nanowire	ru, en_US, uk
dc.subject	field effect transistor	ru, en_US, uk
dc.subject	relaxation quantum transistor	ru, en_US, uk
dc.subject	indium an-timonide (InSb)	ru, en_US, uk
dc.subject	indium arsenide (InAs)	ru, en_US, uk
dc.subject	digital electronics	ru, en_US, uk
dc.subject	terahertz range	ru, en_US, uk
dc.title	Ultra-High-Speed Low-Power Electronics	ru, en_US, uk